M01C-3 Highly Linear RF CMOS Amplker and Mixer Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors

Absrracl A highly linear CMOS RF amplifier and mixer circuits adopting MOSFET transconductance linearization bv linearlv suoemosine several commonTherefore it is very important to linearize MOSFET transconductance for both RF amplifier and mixer circuits. We have shown that multide eated transistor (MGTR) 111 ~ _ . source FET transistors in parallel, combined with some additional circuit techniques such as cascode for amplifier and harmonic tuning for mixer, are reported. Experimental result designed using above techniques shows IP3 improvements a t given power consumption by as large as 10 dB for RF amplifier at 900 MHz and 7 dB for Gilbert cell mixer a t 2.4 GHz without sacrificing other features such as gain and NF.